1.

Conference Proceedings
Conference Proceedings
1. Deep Trap Characterization in GaN Using Thermal and Optical Admittance Spectroscopy
KrTschil, A. ; Witte, H. ; Lisker, M. ; Christen, J. ; Birkle, U. ; Einfeldt, S. ; Hommel, D. ; Topf, M. ; Meyer, B. K.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.887-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
2.

Conference Proceedings
Conference Proceedings
2. Low Pressure CVD of GaN from GaCl3 and NH3
Topf, M. ; Koynov, S. ; Fischer, S. ; Dirnstorfer, I. ; Kriegseis, W. ; Burkhardt, W. ; Meyer, B-K.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.307-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
3.

Conference Proceedings
Conference Proceedings
3. Fast and slow UV-photoresponse in n-type GaN
Rocha, R. ; Koynov, S. ; Brogueira, P. ; Schwarz, R. ; Chu, V. ; Topf, M. ; Meister, D. ; Meyer, B. K.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.395-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572