Poly Gate Depletion Effect on Deep Submicrometer CMOS

Poly Gate Depletion Effect on Deep Submicrometer CMOS

Author(s):

Ye, Q.

Publication title:

ULSI process integration : proceedings of the first international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-18

Pub. Year:

1999

Page(from):

301

Page(to):

310

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772419 [1566772419]

Language:

English

Call no.:

E23400/99-18

Type:

Conference Proceedings

Details

TDL ID:	ZA00013947
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
Conf. info. (Number):	1st ; 196th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	1999.10.17-1999.10.22

Similar Items:

1 Conference Proceedings Yield-limiting NMOSFET gate depletion in a deep submicrometer CMOS process Karnett,M.P., Qian,S., Mitchell,T., Subramaniam,V., Sur,H., Haby,B.J., Brugge,H.B. SPIE-The International Society for Optical Engineering	7 Conference Proceedings Reduced Poly-Si Gate Depletion Effect by Pulsed Excimer Laser Annealing Wong, H.Y., Takeuchi, H., King, T.-J., Ameen, M., Agarwal, A. Electrochemical Society
2 Conference Proceedings 44. Poly-Si gate CMOS with hafnium silicate gate dielectric Hobbs, C., Grant, J., Kher, S., Dhandapani, V., Taylor, B., Dip, L., Hegde, R., Metzner, C., Tseng, H., Gilmer, D., … Electrochemical Society	8 Conference Proceedings Modeling the Dependence of the Gate Current on Ge Content in Ultrathin Gate Dielectric PMOS Devices With Poly-Si1-xGex Gate Material Shanware, A., Massoud, H. Z., Acker, A., Li, V. Z. Q., Mirabedini, M. R., Henson, K., Hauser, J. R., Wortman, J. J. MRS - Materials Research Society
3 Conference Proceedings Performance Impact of silicided Source/Drain/Gate on Deep Submicron CMOS Circuits L.K. Wang, W.H. Chang, T. Lii Electrochemical Society	9 Conference Proceedings Formation of Deep Sub-Micrometer Cobalt Silicided Poly Gate Using Bilayer Processes Wang, Q.F., Lauwers, A., Deweerdt, B., Verbeeck, R., Maex, K. Electrochemical Society
4 Conference Proceedings A Study on the Self-Heating Effect in Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures Pavanello, M.A., Martino, J.A., Simoen, E., Mercha, A., Claeys, C., Dc Meyer, K. Electrochemical Society	10 Conference Proceedings Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-μm CMOS technology Lee, T.-K., Wang, Y.-C., Chi, M., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H. SPIE-The International Society for Optical Engineering
5 Conference Proceedings DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors Jonsson, R., Wahab, Q., Rudner, S. Trans Tech Publications	11 Conference Proceedings Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-μm CMOS technology Lee, T.-K., Wang, Y.-C., Chi, M.-H., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H. SPIE-The International Society for Optical Engineering
6 Conference Proceedings Steady-state characterization of partially depleted SOI CMOS gates Bracale, A., Dupont-Nivet, E., Pelloje, J.-L. Electrochemical Society	12 Conference Proceedings Pecision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-Цm CMOS technology Lee, T.-K., Wang, Y.-C., Chi, M.-H., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12