1.

Conference Proceedings
Conference Proceedings
1. Excellent Electrical Characteristics of Ultrafine Trench Isolation
Shiozawa, K. ; Oisbi, T. ; Maeda, H. ; Murakami, T. ; Yasumura, K. ; Abe, Y. ; Tokuda, Y.
Pub. info.: ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology.  pp.479-490,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-3
2.

Conference Proceedings
Conference Proceedings
2. DIFFUSION OF Te OR Zn INTO GaAs FROM DEOPED SiO2 FILMS BY RAPID THERMAL PROCESSING
Kitagawa, A. ; Usami, A. ; Tokuda, Y. ; Wada, T. ; Kan, H. ; Murakami, T.
Pub. info.: Advanced surface processes for optoelectronics : symposium held April 5-8, 1988, Reno, Nevada, U.S.A..  pp.65-70,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 126
3.

Conference Proceedings
Conference Proceedings
3. VARIATIONS OF ELECTRON TRAPS IN MBE A1xGa1-XaX BY RAPID THERMAL PROCESSING
Ueda, H. ; Kitagawa, A. ; Tokuda, Y. ; Usami, A. ; Wada, T. ; Kano, H.
Pub. info.: Advanced surface processes for optoelectronics : symposium held April 5-8, 1988, Reno, Nevada, U.S.A..  pp.221-226,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 126
4.

Conference Proceedings
Conference Proceedings
4. DIFFUSION OF Zn INTO GaAs0.6P0.4:Te FROM Zn-DOPED OXIDE FILMS BY RAPID THERMAL PROCESSING
Usami, A. ; Tokuda, Y. ; Shiraki, H. ; Ueda, H. ; Wada, T. ; Kan, H. ; Murakami, T.
Pub. info.: Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A..  pp.393-400,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 92
5.

Conference Proceedings
Conference Proceedings
5. OPTICAL CURRENT DLTS WITH A BIPOLAR RECTANGULAR WEIGHTING FUNCTION FOR HIGH-RESISTIVITY NEUTRON TRANSMUTATION DOPED SILICON
Tokuda, Y. ; Usami, A.
Pub. info.: Materials characterization : symposium held April 15-17, 1986, Palo Alto California, U.S.A..  pp.349-360,  1986.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 69
6.

Conference Proceedings
Conference Proceedings
6. ELECTRICAL CHARACTERISTICS OF SILICON p+n DIODES FABRICATED BY B+ IMPLANTATION AND RAPID THERMAL ANNEALING IN THE TEMPERATURE RANGE 700-1000°C
Usami, A. ; Katayama, M. ; Tokuda, Y. ; Wada, T.
Pub. info.: Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A..  pp.211-216,  1986.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 71
7.

Conference Proceedings
Conference Proceedings
7. DOMINANT MIDGAP LEVELS IN THE COMPENSATION MECHANISM IN GaAs
Shiraki, H. ; Tokuda, Y. ; Tohyama, E. ; Sassa, K. ; Toyama, N.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.425-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
8.

Conference Proceedings
Conference Proceedings
8. Effects of CF4 Reactive Ion Etching on Si-Doped Al0.2Ga0.8As
Ito, A. ; Sakai, A. ; Tokuda, Y.
Pub. info.: III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.243-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 535
9.

Conference Proceedings
Conference Proceedings
9. Activation of Implanted Phosphorus Ions into Silicon by Followed Hydrogen Ion Implantations
Hasebe, Y. ; Ohshima, H. ; Hattori, T. ; Usami, A. ; Tokuda, Y.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.623-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
10.

Conference Proceedings
Conference Proceedings
10. Characterization Of Deep Levels In 3C-SiC By Optical Capacitance-Transient Spectroscopy
Nakakura, Y. ; Kato, M. ; Ichimura, M. ; Arai, E. ; Tokuda, Y.
Pub. info.: Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.167-172,  2002.  Warrendale, Pa.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 719