1.

Conference Proceedings
Conference Proceedings
1. INVITED: COMPUTER SIMULATION OF IMPURITY GET?ERING CAPABILITY IN SILICON FOR CURRENT GETTERING TECHNIQUES
Hayamizu, Y. ; Tobe, S. ; Takeno, H. ; Kitagawara, Y.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1080-1094,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
2.

Conference Proceedings
Conference Proceedings
2. High Performance Silicon Wafer with Wide Grown-in Void Free Zone and High Density Internal Gettering Site Achieved via Rapid Crystal Growth with Nitrogen Doping and High Temperature Hydrogen and/or Argon Annealing
Tamatsuka, M. ; Kobayashi, N. ; Tobe, S. ; Masui, T.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.456-467,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
3.

Conference Proceedings
Conference Proceedings
3. Systematic Analyses of Practical Problems Related to Defects and Metallic Impurities in Silicon
Kitagawara, Y. ; Takeno, H. ; Tobe, S. ; Hayamizu, Y. ; Koide, T. ; Takenaka, T.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.3-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510