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14 results

Conference Proceedings

1. FTIR Absorption aud Photoluminescence Study of a New Defect System in GaP:Fe:S

Schneider,J.M. ; Thonke,K. ; Ulrici,W. ; Sauer,R.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.323-328, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

2. Mid-infrared silicon/germanium focal plane detector arrays

Presting,H. ; Konle,J. ; Hepp,M. ; Kibbel,H. ; Thonke,K. ; Sauer,R. ; Cabanski,W.A. ; Jaros,M.

Pub. info.:	Silicon-based optoelectronics : 27-28 January 1999, San Jose, California. pp.73-89, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3630

Conference Proceedings

3. Photoluminescence Uniaxial Stress Study of Fe2+ in InP

Thonke,K. ; Pressel,K. ; Hermann,H.U. ; Domen,A.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part2 pp.869-874, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

4. Photoluminescence,optical absorption,and EPR studies of the CO2+- Sp pair defect in GaP

Goser,R. ; Kreissl,J. ; Thonke,K. ; Ulrici,W.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1069-1074, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

5. Novel Very Slow Photoluminescence Processes at Transition Metal Ions in III-V Semiconductors

Thonke,K. ; Baier,T. ; Hamann,J. ; Scheerer,O. ; Sauer,R. ; Ulrici,W.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1521-1526, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

6. Piezo-Spectroscopic Study of the V3+ photoluminescence in GaP:V:S

Steck,S. ; Rtickert,G. ; Thonke,K. ; Ulrici,W. ; Sauer,R.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.731-736, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

7. Oxygen-Carbon Interactions in Silicon:Photoluminescence Defect Spectrum at 1.06 eV Emission Energy

Ktrner,W. ; Sauer,R. ; Thonke,K. ; Asom,M.T. ; Zulehner,W.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part1 pp.159-164, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

8. Donor acceptor pair transitions in GaN

Komitzer,K. ; Mayer,M. ; Mundbrod,M. ; Thonke,K. ; Pelzmann,A. ; Kamp,M. ; Sauer,R.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1113-1118, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

9. Resonance-mode phonon replica in the optical spectra of transition-metal impurities in GaP

Schrepel,C. ; Scherz,U. ; Ulrici,W. ; Thonke,K.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1075-1080, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

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Conference Proceedings

10. Fine structure of the boron bound excitou in diamond

Stemschulte,H. ; Wahl,S. ; Thonke,K. ; Sauer,R. ; Ruf,T. ; Cardona,M. ; Anthony,T.R.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.757-762, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

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