Electrical Characterization of High k Devices: Charges and Traps Effects on Instability, Reliability and Mobility Behavior

Electrical Characterization of High k Devices: Charges and Traps Effects on Instability, Reliability and Mobility Behavior

Author(s):

Reimbold, G.

Publication title:

Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2005-01

Pub. Year:

2005

Page(from):

437

Page(to):

455

Pages:

19

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774598 [1566774594]

Language:

English

Call no.:

E23400/200501

Type:

Conference Proceedings

Details

TDL ID:	ZA00015386
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films ; Meeting of the Electrochemical Society
Conf. info. (Number):	8th ; 207th
Conf. info. (Venue):	Quebec City, Quebec, Canada
Conf. info. (Date):	2005.05.16-2005.05.20

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