1.

Conference Proceedings
Conference Proceedings
1. GaN Crystals: Growth and Doping Under Pressure
Grzegory, I. ; Bockowski, M. ; Lucznik, B. ; Wroblewski, M. ; Krukowski, S. ; Weyher, J. ; Nowak, G. ; Suski, T. ; Leszczynski, M. ; Teisseyre, H. ; Litwin-Staszewska, E. ; Porowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.15-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
2.

Conference Proceedings
Conference Proceedings
2. Doping, Activation of Impurities, and Defect Annihilation in GaN by High Pressure Annealing
Suski, T. ; Jun, J. ; Leszczynski, M. ; Teisseyre, H. ; Grzegory, I. ; Porowski, S. ; Baranowski, J. M. ; Rocket, A. ; Strite, S. ; Stonert, A. ; Turos, A. ; Tan, H. H. ; Williams, J. S. ; Jagadish, C.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.949-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
3.

Conference Proceedings
Conference Proceedings
3. Light Emitters Fabricated on Bulk GaN Substrates: Challenges and Achievements
Perlin, Piotr ; Leszczynski, M. ; Prystawko, P. ; Czernecki, R. ; Nowak, G. ; Wisniewski, P. ; Dmowski, L. ; Teisseyre, H. ; Litwin-Staszewska, E. ; Suski, T. ; Grzegory, I. ; Porowski, S. ; Ivanov, V.Yu. ; Godlewski, M. ; Holst, J. ; Hoffman, A.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.289-294,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
4.

Conference Proceedings
Conference Proceedings
4. Crystal Growth of HgS in the Cinnabar Structure under High Gas Pressure Conditions: Physical Characterization
Tedenac, J.C. ; Record, M.C. ; Ayral-Marin, R.M. ; Teisseyre, H. ; Bockowski, M. ; Lyapin, S. ; Vicente, P. ; Jun, J.
Pub. info.: Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII).  pp.246-254,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-10
5.

Conference Proceedings
Conference Proceedings
5. Piezoelectric Field and Its Influence on the Pressure Behavior of the Light Emission From InGaN/GaN and GaN/AlGaN Quantum Wells
Suski, T. ; Perlin, P. ; Lepkowski, S.P. ; Teisseyre, H. ; Gorczyca, I. ; Prystawko, P. ; Leszczynski, M. ; Grandjean, N. ; Massies, J. ; Kitamura, T. ; Ishida, Y. ; Chichibu, S.F. ; Okumura, H.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.487-500,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
6.

Conference Proceedings
Conference Proceedings
6. Properties of bulk Gallium Nitride crystals
Suski, T. ; Perlin, P. ; Leszczynski, M. ; Teisseyre, H. ; Grzegory, I. ; Bockowski, M. ; Jun, J. ; Potowski, S. ; Lilenthal-Weber, Z.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.46-57,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
7.

Conference Proceedings
Conference Proceedings
7. Growth and Properties of Bulk Single Crystals of GaN
Suski, T. ; Perlin, P. ; Leszczynski, M. ; Teisseyre, H. ; Grzegory, I. ; Jun, J. ; Bockowski, M. ; Porowski, S. ; Pakula, K. ; Wysmolek, A. ; Baranowski, J. M.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.15-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
8.

Conference Proceedings
Conference Proceedings
8. Hydrostatic pressure: a unique tool in studies of quantum structures and light emitting devices based on group-III nitrides (Invited Paper) [6121-24]
Suski, T. ; Franssen, G. ; Perlin, P. ; Teisseyre, H. ; Kaminska A
Pub. info.: Gallium Nitride Materials and Devices.  pp.61210O-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6121