1.

Conference Proceedings
Conference Proceedings
1. Optimization of InGaAs/InP DHBT Devices for Use in High Speed Circuits
Kopf, R.F. ; Wang, Y.-C. ; Hamm, R.A. ; Ryan, R.W. ; Tate, A. ; Melendes, M.A. ; Pullela, R. ; Georgiou, G. ; Mattia, J.-P. ; Baeyens, Y. ; Tsai, H.-S. ; Chen, Y.-K.
Pub. info.: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) : proceedings of the thirty-first symposium.  pp.169-176,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-17
2.

Conference Proceedings
Conference Proceedings
2. Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications
Kopf, R.F. ; Weimann, N.G. ; Hamm, R.A. ; Ryan, R.W ; Tate, A. ; Melendes, M.A. ; Melendes, R. ; Lee, Q. ; Georgiou, G. ; Baeyens, Y ; Chen, Y-K
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.7-14,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
3.

Conference Proceedings
Conference Proceedings
3. InP/InGaAs Heterostructure Bipolar Transistors Using a Patterned Subcollector
Hamm, R. ; Ryan, R. ; Pinzone, C. ; Kopf, R. ; Pullela, R. ; Tate, A. ; Bunit, J.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.66-72,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
4.

Conference Proceedings
Conference Proceedings
4. Indium Phosphide HBT Device Parameter Extraction for Spice Modeling and Process Optimization
Weimann, N.G. ; Kopf, R.F. ; Hamm, R.A. ; Kuo, J.-M. ; Lee, Q. ; Melendes, M. ; Melendes, R. ; Ryan, R.W. ; Tate, A. ; Chen, Y.K.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.186-191,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
5.

Conference Proceedings
Conference Proceedings
5. Fabrication of Reduced Area InGaAs/InP HBT and DHBT Devices
Kopf, R.E. ; Wang, Y.-C. ; Hamm, R.A. ; Ryan, R.W ; Tate, A. ; Melendes, M.A. ; Pullela, R. ; Georgiou, G. ; Mattia, J.-P. ; Baeyens, Y. ; Tsai, H.-S. ; Weimann, N. ; Lee, Q. ; Chen, Y.-K.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.313-322,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
6.

Conference Proceedings
Conference Proceedings
6. Fabrication of Reliable InGaAs/InP DHBT Structures for High Speed Circuit Applications
Kopf, R.F. ; Hamm, R.A. ; Ryan, R.W. ; Tate, A. ; Chen, Y.K. ; Georgiou, G. ; Ren, F. ; Lang, D.V.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.534-547,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
7.

Conference Proceedings
Conference Proceedings
7. Reduction of the Base-Collector Capacitance of Heterostructure Bipolar Transistors using Regrowth over a Patterned Subcollector
Hamm, R. ; Lee, M. ; Pinzone, C. ; Kopf, R. ; Ryan, R. ; Pullela, R. ; Tate, A. ; Melendes, M. ; Melendes, R. ; Werder, D.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.329-338,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
8.

Conference Proceedings
Conference Proceedings
8. Novel Fabrication of C-Doped Base InGaAs/InP DHBT Structures for High-Speed Circuit Applications
Kopf, R. F. ; Hamm, R. A. ; Malik, R. J. ; Ryan, R. W. ; Burm, J. ; Tate, A. ; Chen, Y-K. ; Georgiou, G. ; Lang, D. V. ; Geva, M. ; Ren, F.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.413-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
9.

Conference Proceedings
Conference Proceedings
9. Integrated Nonreciprocal Devices for Application in Optical Communication Systems
Shintaku, T. ; Sugimoto, N. ; Tate, A. ; Kubota, E. ; Kozawaguchi, H. ; Katoh, Y.
Pub. info.: High-density magnetic recording and integrated magneto-optics, materials and devices : symposium held April 12-16, 1998, San Francisco, California, U.S..  pp.501-,  1998.  Warrendale, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 517
10.

Conference Proceedings
Conference Proceedings
10. Thin Film Resistor Fabrication for lnP Technology Applications (Invited)
Kopf, R.F. ; Melendes, R. ; Jacobson, D.C. ; Tate, A. ; Melendes, M.A. ; Reyes, R.R. ; Hamm, R.A. ; Yang, Y. ; Frackoviak, J. ; Weimann, N.G. ; Maynard, H.L. ; Liu, C.T.
Pub. info.: State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium.  pp.81-86,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-20