1.

Conference Proceedings
Conference Proceedings
1. THE DONOR LEVEL Ti3+/Ti4+ IN InP:ELECTRICAL AND OPTICAL PROPERTIES.
BREMOND,G. ; GUILLOT,G. ; NOUAILHAT,A. ; LAMBERT,B. ; TOUDIC,Y. ; GAUNEAU,M. ; DEVEAUD,B.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part2  pp.657-662,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12
2.

Conference Proceedings
Conference Proceedings
2. STUDY OF TRANSITION METAL DEEP DONOR LEVELS IN InP.
LAMBERT,B. ; TOUDIC,Y. ; COQUTLLE,R. ; GRANDPIERRE,G. ; GAUNEAU,M.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part2  pp.651-656,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12