1.

Conference Proceedings
Conference Proceedings
1. Investigation on Molybdenum and Its Conductive Oxides as p-type Metal Gate Candidates
Z. Li ; T. Schram ; T. Witters ; H. Cho ; B. O'Sullivan
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.575-583,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
2.

Conference Proceedings
Conference Proceedings
2. Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes
T. Conard ; T. Schram ; A. Akheyar ; K. Arstila ; G. Zschaetzsch ; V. Paraschiv ; W. Vandervorst ; B. Brijs ; S. De Gendt ; Z. Jiang ; V. Kaushik ; J. Lenna ; L. Ragnarsson ; D. P. Brunco
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.159-170,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
3.

Conference Proceedings
Conference Proceedings
3. Effective Workfunction Modulation by As Implantation in Metal Gate Stacks
R. Singanamalla ; H. Yu ; T. Janssens ; T. Witters ; T. Schram ; S. Kubicek ; S. DeGendt ; M. Jurczak ; K. De Meyer
Pub. info.: Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing.  pp.49-62,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(1)
4.

Conference Proceedings
Conference Proceedings
4. Evaluation of Nb(Si)N as Metal Gate Material
N. Van Hoornick ; H. De Witte ; T. Hitters ; C. Zhao ; T. Canard ; H. Huatori ; J. Swerts ; T. Schram ; J. Maes ; S. De Gendt ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.495-506,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)