1.

Conference Proceedings
Conference Proceedings
1. 8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
T. Robert ; S. Juillaguet ; M. Marinova ; T. Chassagne ; I. Tsiaoussis
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.339-342,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
2.

Conference Proceedings
Conference Proceedings
2. Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates
J.W. Sun ; T. Robert ; V. Jokubavicius ; S. Juillaguet ; R. Yakimova
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.407-410,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. About the Acidity Level in Room Temperature Ionic Liquids
T. Robert ; H. Olivier-Bourbigou ; L. Magna ; B. Gilbert
Pub. info.: Molten salts 15 : in memory of Robert Osteryoung.  pp.71-82,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(35)
4.

Conference Proceedings
Conference Proceedings
4. Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
J. Eid ; I.G. Galben ; G. Zoulis ; T. Robert ; D. Chaussende
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.45-48,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
5.

Conference Proceedings
Conference Proceedings
5. Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
T. Robert ; M. Marinova ; S. Juillaguet ; A. Henry ; E.K. Polychroniadis
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.314-317,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
6.

Conference Proceedings
Conference Proceedings
6. TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
M. Marinova ; G. Zoulis ; T. Robert ; F. Mercier ; A. Mantzari
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.383-386,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
7.

Conference Proceedings
Conference Proceedings
7. 6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
T. Robert ; M. Marinova ; S. Juillaguet ; A. Henry ; E.K. Polychroniadis
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.347-350,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648