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68 results

Conference Proceedings

1. Development of high time resolution measurement system of frequency characteristics in bioelectrical impedance for biodynamic analysis

T. Nakamura ; T. Kusuhara ; Y. Yamamoto

Pub. info.:	Sixth International Symposium on Instrumentation and Control Technology: Signal Analysis, Measurement Theory, Photo -Electronic Technology, and Artificial Intelligence : 13-15 October 2006, Beijing, China. pp.63571S-1-63571S-5, 2006. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	6357

Conference Proceedings

2. Enhancement of Upconversion Luminescence from Er Doped Al2O3 Films by a Thin Metal Layer

T. Nakamura ; M. Fujii ; Y. Usui ; T. Aisaka ; S. Hayashi

Pub. info.:	Physics and Chemistry of Luminescent Materials, including the 4th Symposium on Persistent Phosphors. pp.87-93, 2009. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(31)

Conference Proceedings

3. Via Filling Electrodeposition by Using Periodic-Reverse Current

K.N. Kondo ; T. Nakamura ; D. Mikami ; T. Okubo

Pub. info.:	Electrochemical Processing in ULSI and MEMS 3. pp.135-140, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	6(8)

Conference Proceedings

4. Etching Rate Enhancement of Copper by Adding Sulfur Compounds in Chemical-Mechanical Polishing Slurries

T. Kanki ; T. Shirasu ; T. Kimura ; T. Nakamura ; M. Miyajima

Pub. info.:	Electrochemical Processing in ULSI and MEMS 3. pp.65-75, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	6(8)

Conference Proceedings

5. Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380° C

Y. Nanen ; M. Aketa ; Y. Nakano ; H. Asahara ; T. Nakamura

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.885-888, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

6. Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density

H. Fujiwara ; M. Konishi ; T. Ohnishi ; T. Nakamura ; K. Hamada

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.694-697, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

7. Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation

M. Satoh ; S. Nagata ; T. Nakamura ; H. Doi ; M. Shibagaki

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.679-682, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

8. Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance

K. Nomoto ; M. Satoh ; T. Nakamura

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.1325-1328, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

9. Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices

D. Ikeguchi ; T. Kirino ; S. Mitani ; Y. Nakano ; T. Nakamura

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.765-768, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

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Conference Proceedings

10. 4H-SiC Trench Structure Schottky Diodes

M. Aketa ; Y. Yokotsuji ; M. Miura ; T. Nakamura

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.933-936, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

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Author: T. Nakamura