1.
Conference Proceedings
T. Tezuka ; T. Irisawa ; E. Toyoda ; N. Sugiyama ; S. Takagi
Pub. info.:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment . pp.263-274, 2008. Pennington, N.J.. Electrochemical Society
Title of ser.:
ECS transactions
Ser. no.:
13(1)
2.
Conference Proceedings
S. Takagi ; T. Irisawa ; T. Tezuka ; S. Nakaharai ; T. Numata
Pub. info.:
ULSI process integration 5 . pp.61-74, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:
ECS transactions
Ser. no.:
11(6)
3.
Conference Proceedings
N. Sugiyama ; T. Tezuka ; T. Irisawa ; K. Usuda ; Y. Moriyama
Pub. info.:
SiGe and Ge, materials, processing, and devices . pp.1015-1022, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:
ECS transactions
Ser. no.:
3(7)
4.
Conference Proceedings
T. Irisawa ; T. Numata ; T. Tezuka ; K. Usuda ; N. Hirashita
Pub. info.:
SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices . pp.367-379, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:
ECS transactions
Ser. no.:
16(10)