Evaluation of Nb(Si)N as Metal Gate Material
- Author(s):
N. Van Hoornick H. De Witte T. Hitters C. Zhao T. Canard H. Huatori J. Swerts T. Schram J. Maes S. De Gendt M. Heyns - Publication title:
- Physics and technology of high-k gate dielectrics III
- Title of ser.:
- ECS transactions
- Ser. no.:
- 1(5)
- Pub. Year:
- 2006
- Page(from):
- 495
- Page(to):
- 506
- Pages:
- 12
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566774444 [1566774446]
- Language:
- English
- Call no.:
- E23400/1-5
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
8
Conference Proceedings
Effect of Al-Content and Post Deposition Annealing on the Electrical Properties of Ultra-Thin HfAlxOy Layers
Materials Research Society |
3
Conference Proceedings
13 High-k Gate Stack Engineering - towards Meeting Low Standby Power and High Performance Targets
Electrochemical Society |
Electrochemical Society |
4
Conference Proceedings
In-line Electrical Metrology for High-K Gate Dielectrics Deposited by Atomic Layer Chemical Vapor Deposition
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
Materials Research Society |