1.

Conference Proceedings
Conference Proceedings
1. DyScHfOx as High-k Gate Dielectrics: Structural and Electrical Properties
C. Adelmann ; S. Van Elshocht ; P. Lehnen ; T. Canard ; A. Franquet ; C. Zhao ; L. Ragnarsson ; V. Chang ; H. Choi ; Y. Hong-Yu ; S. De Gendt
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.113-120,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
2.

Conference Proceedings
Conference Proceedings
2. Evaluation of Nb(Si)N as Metal Gate Material
N. Van Hoornick ; H. De Witte ; T. Hitters ; C. Zhao ; T. Canard ; H. Huatori ; J. Swerts ; T. Schram ; J. Maes ; S. De Gendt ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.495-506,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)