GaAs Layer Splitting by Helium and/or Hydrogen Implantation

GaAs Layer Splitting by Helium and/or Hydrogen Implantation

Author(s):

Publication title:

Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2003-19

Pub. Year:

2003

Page(from):

368

Page(to):

375

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774024 [1566774020]

Language:

English

Call no.:

E23400/200319

Type:

Conference Proceedings

Details

TDL ID:	ZA00014082
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Semiconductor Wafer Bonding ; Electrochemical Society Meeting
Conf. info. (Number):	7th ; 2003
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	2003.04.27-2003.05.02

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