1.

Conference Proceedings
Conference Proceedings
1. Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted Material
Gudjonsson, G. ; Olafsson, H. O. ; Allerstam, F. ; Nilsson, P. A. ; Sveinbjornsson, E. O. ; Rodle, T. ; Jos, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.833-836,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
Sveinbjornsson, E. O. ; Olafsson, H. O. ; Gudjonsson, G. ; Allerstam, F. ; Nilsson, P. A. ; Syvajarvi, M. ; Yakimova, R. ; Hallin, C. ; Rodle, T. ; Jos, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.841-844,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment
Allerstam, F. ; Gudjonsson, G. ; Olafsson, H. O. ; Sveinbjornsson, E. O. ; Rodle, T. ; Jos, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.837-840,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. Hydrogen and Lithium Passivation of Gold in Silicon: A Comparative Study
Sveinbjornsson, E. O. ; Kristjansson, S. ; Engstrom, O. ; Gislason, H. P.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.371-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
5.

Conference Proceedings
Conference Proceedings
5. High-Frequency Capacitance Measurements on Metal-Insulator-Semiconductor Structures in Thermal Nonequilibrium Condition
Sadeghi, M. ; Jauhiainen, A. ; Liss, B. ; Sveinbjornsson, E. O. ; Engstrom, O.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.315-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
6.

Conference Proceedings
Conference Proceedings
6. Characterization of SiC MOS Structures Using Conductance Spectroscopy and Capacitance Voltage Analysis
Sveinbjornsson, E. O. ; Ahnoff, M. ; Olafsson, H. O.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1117-1120,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)