1.

Conference Proceedings
Conference Proceedings
1. X-RAY DIFFRACTION STUDIES OF LOW TEMPERATURE GaAs
Kowalski, G. ; Leszczynski, M. ; Kurpiewski, A. ; Kaminska, M. ; Suski, T. ; Weber, E.R.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.125-130,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
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Conference Proceedings
Conference Proceedings
2. Recent Results in High Pressure Growth of GaN Single Crystals
Krukowski, S. ; Bockowski, M. ; Grzegory, I. ; Lucznik, B. ; Nowak, G. ; Wroblewski, M. ; Leszczyaski, M. ; Teissevre, G. ; Suski, T. ; Porowski, S.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.189-200,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
3.

Conference Proceedings
Conference Proceedings
3. X-ray Absorption and Reflection as Probes of the GaN Conduction Bands: Theory and Experiment of the N-K-Edge and Ga M2,3 Edges
Lambrecht, W. R. L. ; Rashkeev, S. N. ; Segall, B. ; Lawniczak-Jablonska, K. ; Suski, T. ; Gullikson, E. M. ; Underwood, J. H. ; Perera, R. C. C. ; Rife, J. C.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.881-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
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Conference Proceedings
Conference Proceedings
4. The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
Kuball, M. ; Mayes, J. M. ; Suski, T. ; Jun, J. ; Tan, H. H. ; Williams, J. S. ; Jagadish, C.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.46.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
5.

Conference Proceedings
Conference Proceedings
5. GaN Crystals: Growth and Doping Under Pressure
Grzegory, I. ; Bockowski, M. ; Lucznik, B. ; Wroblewski, M. ; Krukowski, S. ; Weyher, J. ; Nowak, G. ; Suski, T. ; Leszczynski, M. ; Teisseyre, H. ; Litwin-Staszewska, E. ; Porowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.15-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
McCluskey, M. D. ; Romano, L. T. ; Krusor, B. S. ; Hofstetter, D. ; Bour, D. P. ; Kneissl, M. ; Johnson, N. M. ; Suski, T. ; Jun, J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.42.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
7.

Conference Proceedings
Conference Proceedings
7. Observation of Native Ga Vacancies in GaN by Positron Annihilation
Saarinen, K. ; Laine, T. ; Kuisma, S. ; Nissila, J. ; Hautojarvi, P. ; Dobrzynski, L. ; Baranowski, J. M. ; Pakula, K. ; Stepniewski, R. ; Wojdak, M. ; Wysmolek, A. ; Suski, T. ; Leszczynski, M. ; Grzegory, I. ; Porowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.757-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
8.

Conference Proceedings
Conference Proceedings
8. Influence of Free Charge on the Lattice Parameters of GaN and Other Semiconductors
Leszczynski, M. ; Bak-Misiuk, J. ; Domagala, J. ; Suski, T.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.311-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
9.

Conference Proceedings
Conference Proceedings
9. GaN Homoepitaxy for Device Applications
Kamp, M. ; Kirchner, C. ; Schwegler, V. ; Pelzmann, A. ; Ebeling, K. J. ; Leszczynski, M. ; Grzegory, I. ; Suski, T. ; Porowski, S.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G10.2.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
10.

Conference Proceedings
Conference Proceedings
10. Structural Defects in Heteroepitaxial and Homoepitaxial GaN
Lillental-Weber, Zuzanna ; Ruvimov, S. ; Kisielowski, Ch. ; Chen, Y. ; Swider, W. ; Washburn, J. ; Newman, N. ; Gassmann, A. ; Liu, X. ; Schloss, L. ; Weber, E. R. ; Grzegory, I. ; Bockowski, M. ; Jun, J. ; Suski, T. ; Pakula, K. ; Baranowski, J. ; Porowski, S. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.351-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395