1.

Conference Proceedings
Conference Proceedings
1. Piezoelectric Field and Its Influence on the Pressure Behavior of the Light Emission From InGaN/GaN and GaN/AlGaN Quantum Wells
Suski, T. ; Perlin, P. ; Lepkowski, S.P. ; Teisseyre, H. ; Gorczyca, I. ; Prystawko, P. ; Leszczynski, M. ; Grandjean, N. ; Massies, J. ; Kitamura, T. ; Ishida, Y. ; Chichibu, S.F. ; Okumura, H.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.487-500,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
2.

Conference Proceedings
Conference Proceedings
2. High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and Stress
Paskova, T. ; Suski, T. ; Bockowski, M. ; Paskov, P. P. ; Darakchieva, V. ; Monemar, B. ; Tuomisto, F. ; Saarinen, K. ; Ashkenov, N. ; Schubert, M. ; Roder, C. ; Hommel, D.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.429-434,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
3.

Conference Proceedings
Conference Proceedings
3. Comprehensive Study of Anomalous Conduction Band Structure of InxGa1-xAs1-yNy
Skierbiszewski, C. ; Perlin, P. ; Wisniewski, P. ; Presz, A. ; Suski, T. ; Geisz, J. ; Jantsch, W. ; Mars, D.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
4.

Conference Proceedings
Conference Proceedings
4. Universal Behavior of the Pressure Coefficient of the Light Absorption and Emission in InGaN Structures
Perlin, P. ; Suski, T. ; Wisniewski, P. ; Gorczyca, I. ; Lepkowski, S. ; Hansen, M. ; DenBaars, S.P. ; Damilano, B. ; Grandjean, N. ; Massie, J.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
5.

Conference Proceedings
Conference Proceedings
5. Recent Progress in Implantation and Annealing of GaN and AlGaN
Zolper, J. C. ; Han, J. ; Deusen, S. B. Van ; Crawford, M. H. ; Biefeld, R. M. ; Jun, J. ; Suski, T. ; Baranowski, J. M. ; Pearton, S. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.979-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. Doping, Activation of Impurities, and Defect Annihilation in GaN by High Pressure Annealing
Suski, T. ; Jun, J. ; Leszczynski, M. ; Teisseyre, H. ; Grzegory, I. ; Porowski, S. ; Baranowski, J. M. ; Rocket, A. ; Strite, S. ; Stonert, A. ; Turos, A. ; Tan, H. H. ; Williams, J. S. ; Jagadish, C.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.949-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
7.

Conference Proceedings
Conference Proceedings
7. Localized Donors in GaN: Spectroscopy Using Large Pressures
Wetzel, C. ; Amano, H. ; Akasaki, I. ; Suski, T. ; Ager, J. W. ; Weber, E. R. ; Haller, E. E. ; Meyer, B. K.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.489-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
8.

Conference Proceedings
Conference Proceedings
8. High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates
Perlin, P. ; Leszczynski, M. ; Prystawko, P. ; Czernetzki, R. ; Wisniewski, P. ; Weyher, J.L. ; Nowak, G. ; Borysiuk, J. ; Gorczyca, L. ; Swietlik, T. ; Franssen, G. ; Bering, A. ; Skierbiszewski, C. ; Grzegory, I. ; Suski, T. ; Porowski, S.
Pub. info.: Novel In-Plane Semiconductor Lasers III.  pp.288-296,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5365
9.

Conference Proceedings
Conference Proceedings
9. Recent Results in High Pressure Growth of GaN Single Crystals
Krukowski, S. ; Bockowski, M. ; Grzegory, I. ; Lucznik, B. ; Nowak, G. ; Wroblewski, M. ; Leszczyaski, M. ; Teissevre, G. ; Suski, T. ; Porowski, S.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.189-200,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
10.

Conference Proceedings
Conference Proceedings
10. Light Emitters Fabricated on Bulk GaN Substrates: Challenges and Achievements
Perlin, Piotr ; Leszczynski, M. ; Prystawko, P. ; Czernecki, R. ; Nowak, G. ; Wisniewski, P. ; Dmowski, L. ; Teisseyre, H. ; Litwin-Staszewska, E. ; Suski, T. ; Grzegory, I. ; Porowski, S. ; Ivanov, V.Yu. ; Godlewski, M. ; Holst, J. ; Hoffman, A.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.289-294,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693