1.

Conference Proceedings
Conference Proceedings
1. Electrical transport properties of highly doped N-type GaN epilayers
Lee,H.J. ; Cheong,M.G. ; Suh,E.-K. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California.  pp.321-326,  1998.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3287
2.

Conference Proceedings
Conference Proceedings
2. Photocurrent decay transient process in a Si1-xGex/Si superlattice
Huang,X.L. ; Jeong,M.S. ; Cha,O.H. ; Kim,J.Y. ; Suh,E.-K. ; Lee,H.J.
Pub. info.: Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California.  pp.313-320,  1998.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3287
3.

Conference Proceedings
Conference Proceedings
3. A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers
Cheong,M.G. ; Oh,K.S. ; Suh,E.-K. ; Lee,H.J.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1385-1388,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film in Si Substrate
Se,Y.H. ; Kim,K.C. ; Shim,H.W. ; Nahm,K.S. ; Suh,E.-K. ; Lee,H.J. ; Hwang,Y.C. ; Kim,D.-K. ; Lee,B.-T.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.199-202,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111)Substrates
Shim,H.W. ; Kim,K.C. ; Seo,Y.H. ; Nahm,K.S. ; Suh,E.-K. ; Lee,H.J. ; Hwang,Y.G.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.195-198,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268