1.

Conference Proceedings
Conference Proceedings
1. Characterization of Defects Generated During Boron Diffusion in SiC
Lin, Xue-feng ; Smith, Stephen P. ; Ma, Xianyun ; Wang, Liang ; Sudarshan, Tangali S. ; Zhang, Qingchun ; Chang, Hsueh-Rong
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.169-174,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
2.

Conference Proceedings
Conference Proceedings
2. Dislocation Content of Etch Pits in Hexagonal Silicon Carbide
Khlebnikov, Igor I. ; Lari, Mohsen B. ; Khlebnikov, Yuri I. ; Bondokov, Robert T. ; Ayyagari, Ramakrishna ; Muzykov, Peter ; Sudarshan, Tangali S. ; Anderson, T. ; Whitlock, J.B.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
3.

Conference Proceedings
Conference Proceedings
3. One of Many Sources of Defect Generation in SiC
Khlebnikov, Igor I. ; Khlebnikov, Yuri I. ; Wood, Colin ; Sudarshan, Tangali S.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
4.

Conference Proceedings
Conference Proceedings
4. Point and Planar Defect Formation in SiC During PVT Growth
Drachev, Roman V. ; Khlebnikov, Yuri I. ; Rhodes, Curtis A. ; Cherednichenko, Dmitry I. ; Khlebnikov, Igor I. ; Sudarshan, Tangali S.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640