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25 results

Conference Proceedings

1. Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes

Tumakha, S.P. ; Porter, L.M. ; Ewing, D.J. ; Wahab, Q. ; Ma, X.Y. ; Sudarshan, T.S. ; Brillson, L.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.907-910, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. A Study of Inhomogeneous Schottky Diodcs on n-Type 4H-SiC

Ewing, D.J. ; Wahab, Q. ; Tumakha, S.P. ; Brillson, L.J. ; Ma, X.Y. ; Sudarshan, T.S. ; Porter, L.M.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.911-914, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Open Core Dislocations and Surface Energy of SiC

Maximenko, S.I. ; Pirouz, P. ; Sudarshan, T.S.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.439-442, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC

Syvajarvi, M. ; Yakimova, R. ; Yazdi, G.R. ; Arjunan, A. ; Toupitsyn, E. ; Sudarshan, T.S.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.227-230, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. Why are Only Some Basal plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?

Zhang, Z.H. ; Shrivastava, A. ; Sudarshan, T.S.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.419-422, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs

Soloviev, S.I. ; Sandvik, P. ; Arthur, S.D. ; Matocha, K.S. ; Maximenko, S.I. ; Sudarshan, T.S.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.427-430, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

7. Performance of Silicon Carbide PiN Diodcs Fabricated on Basal Plane Dislocation-Free Epilayers

Zhang, Z.H. ; Grekov, A.E. ; Sadagopan, P. ; Maximenko, S.I. ; Sudarshan, T.S.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.371-374, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

8. Recombination Behavior of Stacking Faults in SiC p-i-A Diodes

Maximenko, S.I. ; Pirouz, P. ; Sudarshan, T.S.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.367-370, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

9. Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters

Drachev, R. ; Deyneka, E. ; Rhodes, C. ; Schupp, J. ; Sudarshan, T.S.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.15-20, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

10.

Conference Proceedings

10. Oxidation of Porous 4H-SiC Substrates

Soloviev, S. ; Das, T. ; Sudarshan, T.S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1113-1118, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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