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Conference Proceedings

1. Photoluminescence characterization of Mg implanted GaN

Ronning, C. ; Hofsass, H. C. ; Stotzler, A. ; Deicher, M. ; Carlson, E. P. ; Hartlieb, P. J. ; Gehrke, T. ; Rajagopal, P. ; Davis, R. F.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.44.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

2. Microscopic Study of the Hydrogen Diffusion in III-V Semiconductors

Burchard, A. ; Deicher, M. ; Forkel-Wirth, D. ; Knopf, M. ; Magerle, R. ; Stotzler, A. ; Fedoseyev, V. N. ; Mishin, V. I. ; The Isolde-Collaboration

Pub. info.:	Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.171-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	513

Conference Proceedings

3. Identification of As, Ge and Se photoluminescence in GaN using radioactive isotopes

Stotzler, A. ; Weissenborn, R. ; Deicher, M

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W12.9.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

4. Lattice Location and Luminescence Behavior of Rare-Earth Elements Implanted in GaN

Dalmer, M. ; Restle, M. ; Stotzler, A. ; Vetter, U. ; Hofsass, H. ; Bremser, M. D. ; Ronning, C. ; Davis, R. F. ; The Isolde Collaboration,

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.1021-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482