*MODULATION DOPED GaAs WITH ELECTRON MOBILITIES EXCEEDING 107 cm2/V SEC
- Author(s):
- Publication title:
- III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 145
- Pub. Year:
- 1989
- Page(from):
- 3
- Page(to):
- 12
- Pages:
- 10
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990180 [1558990186]
- Language:
- English
- Call no.:
- M23500/145
- Type:
- Conference Proceedings
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