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12 results

Conference Proceedings

1. Influence of Electron Irradiation Induced Defects on the Current-Voltage Characteristics of a Resonant Tunneling Diode

Grandidier,B. ; Stievenard,D. ; Deresmes,D. ; Vanbcsien,O. ; Lippens,D. ; Lorriaux,J.L. ; Zazoui,M.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1553-1558, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

2. Re-examination of the configuration coordinate diagram of EL2

Goguenheim,D. ; Stievenard,D. ; Guillot,G.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.917-922, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

3. Intrinsic defects in electron irradiated p-type GaAs

Jia,Y.Q. ; Bardeleben,H.J.von ; Stievenard,D. ; Delerue,C.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.965-970, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

4. Energy levels associated with the metastable state of EL2

Stievenard,D. ; Delerue,C. ; Bremond,G. ; Guillot,G. ; Azoulay,R. ; Bardeleben,H.J.von ; Bourgoin,J.C. ; Portal,J.C. ; Ranz,E.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.911-916, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

5. The Electron Irradiation Induced Defect E1,E2 in GaAs:Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model

Bardeleben,H.J.von ; Delerue,C. ; Stievenard,D.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.223-228, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

6. Spin Dependent Recombination:an Improved Theory Applied to Deep Centers in Silicon

Lannoo,M. ; Stievenard,D. ; Deresmes,D. ; Vuillaume,D.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1359-1364, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

7. Defects in Heterostructures and Superlattices

Stievenard,D. ; Feng,S.L.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part2 pp.679-688, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

8. Evidence for an Assisted Defect Mechanism Leading to a Reduced Apparent Band Offset

Stievenard,D. ; Letartre,X. ; Lannoo,M. ; Abou,S. ; Guillot,G.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.587-592, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

9. Electrical Characterization of Surface Defects on Porous p-type Silicon

Cadet,C. ; Deresmes,D. ; Vuillaume,D. ; Stievenard,D. ; Grosman,A. ; Ortega,C. ; Siejka,J. ; Bardeleben,H.J.von

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1475-1480, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

10.

Conference Proceedings

10. Detection Of Defects Responsible for Lifetime in p-Type Si

Zazoui,M. ; Bourgoin,J.C. ; Stievenard,D. ; Deresmes,D.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.189-194, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

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Author: Stievenard,D.