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Conference Proceedings

1. Analysis of the Capacitance vs. Voltage in Graded Channel SOI Capacitor

Sonnenberg, V. ; Martino, J.A.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2003 : proceedings of the eighteenth international symposium. pp.38-47, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-9

Conference Proceedings

2. Determination of Silicon Film Doping Concentration and Back Oxide Charge Density using SOI-MOS Capacitor

Sonnenberg, V. ; Martino, J.A.

Pub. info.:	Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium. pp.109-114, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-3

Conference Proceedings

3. Simple Method to Determine the Poly Gate Doping Concentration Based on Poly Depletion Effect

Rodrigues, M. ; Sonnenberg, V. ; Martino, J. A.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2005 : proceedings of the twentieth international symposium. pp.180-187, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-08

Conference Proceedings

4. Determination of the Silicon Film Doping Concentration and the Back Interface Oxide Charge Density using SOI-NMOS Gate Capacitor

Sonnenberg, V. ; Martino, J.A.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2002 : proceedings of the seventeenth international symposium. pp.2-11, 2002. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-8