1.

Conference Proceedings
Conference Proceedings
1. Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B
Maximenko, S. ; Soloviev, S. ; Grekov, A. ; Bolotnikov, A. ; Gao, Y. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.989-992,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Correlation Between Oxide Breakdown and Defects in SiC Wafers
Soloviev, S. ; Khlebnikov, I. ; Madangarli, V. ; Sudarshan, T. S.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.351-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
3.

Conference Proceedings
Conference Proceedings
3. High voltage schottky barrier diodes on p-type SiC using metal-overlap on a thick oxide layer as edge termination
Zhang, Q. ; Madangarli, V. ; Soloviev, S. ; Sudarshan, T. S.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.75-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
4.

Conference Proceedings
Conference Proceedings
4. Thick oxide layers on N and P SiC wafers by a depo-conversion technique
Zhang, Q. ; Madangarli, V. ; Khlebnikov, I. ; Soloviev, S. ; Sudarshan, T. S.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.57-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
5.

Conference Proceedings
Conference Proceedings
5. Oxidation of Porous 4H-SiC Substrates
Soloviev, S. ; Das, T. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1113-1118,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Formation of Stacking Faults in Diffused SiC p+/n-/n+ and p+/p-/n+ Diodes
Soloviev, S. ; Cherednichenko, D. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.525-528,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. Electrical Characterization of Ni/Porous SiC/n-SiC Structure
Grekov, A. ; Soloviev, S. ; Das, T. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.419-422,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
8.

Conference Proceedings
Conference Proceedings
8. Oxidation of Porous 4H-SiC Substrates
Soloviev, S. ; Das, T. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1113-1118,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393