1.

Conference Proceedings
Conference Proceedings
1. Plasma-Induced-Damage of GaN
Shul, R.J. ; Zolper, J.C. ; Hagerott Crawford, M. ; Hickamn, R.J. ; Briggs, R.D. ; Pearton, S.J. ; Lee, J.W. ; Karlicek, R.F., Jr. ; Tran, C. ; Schurman, M. ; Constantine, C. ; Barratt, C.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.232-243,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
2.

Conference Proceedings
Conference Proceedings
2. Complementary HFET Technology for Wireless Digital and Microwave Applications
Baca, A G. ; Zolper, J.C. ; Dubbert, D.F ; Hietala, V.M. ; Sloan, L.R. ; Shul, R.J. ; Sherwin, M.E. ; Hafich, M.J.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.73-83,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
3.

Conference Proceedings
Conference Proceedings
3. ICP Etching of GaAs Via Hole Contacts
Shul, R.J. ; Baca, A.G. ; Briggs, R.D. ; McClellan, G.B. ; Pearton, S.J. ; Constantine, C.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.84-92,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
4.

Conference Proceedings
Conference Proceedings
4. High-Frequency Operation of 0.3 μm GaAs JFETs for Low-Power Electronics
Zolper, J.C. ; Baca, A.G. ; Hietala, V.M. ; Shul, R.J. ; Sherwin, M.E.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.101-106,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
5.

Conference Proceedings
Conference Proceedings
5. Current Gain Simulation Of Npn AlGaN/GaN Heterojunction Bipolar Transistors
Monier, C. ; Pearton, S.J. ; Baca, Albert G. ; Chang, P.C. ; Zhang, L. ; Han, J. ; Shul, R.J. ; Ren, F. ; LaRoche, J.
Pub. info.: Wide-bandgap electronic devices.  pp.T3.3-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
6.

Conference Proceedings
Conference Proceedings
6. Design And Performance Of Nitride-Based Ultraviolet LEDs
Crawford, M.H. ; Han, J. ; Shul, R.J. ; Banas, M.A. ; Figiel, J.J. ; Zhang, L.
Pub. info.: Wide-bandgap electronic devices.  pp.T3.6-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
7.

Conference Proceedings
Conference Proceedings
7. Device Processing For GaN High Power Electronics
Pearton, Stephen J. ; Cao, X.A. ; Cho, H. ; Lee, K.P. ; Monier, C. ; Ren, F. ; Dang, G. ; Zhang, A.P. ; Johnson, W. ; LaRoche, J.R. ; Gila, B.P. ; Abernathy, C.R. ; Shul, R.J. ; Baca, A.G. ; Han, J. ; Chyi, J.-I. ; Van Hove, J.M.
Pub. info.: Wide-bandgap electronic devices.  pp.T7.1-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
8.

Conference Proceedings
Conference Proceedings
8. ECR, ICP and RIE plasma etching of GaN
Shul, R.J. ; McClellan, G.B. ; Rieger, D.J. ; Hafich, M.J. ; Drummond, T.J. ; Pearton, S.J. ; Abernathy, C.R. ; Constantine, C. ; Barratt, C. ; Karlicek, R.F., Jr. ; Tran, A.C. ; Schurmann, M.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.159-167,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
9.

Conference Proceedings
Conference Proceedings
9. III-Nitride ion implantation and device processing
Zolper, J.C. ; Shul, R.J. ; Baca, A.G. ; Pearton, S.J. ; Abernathy, C.R. ; Wilson, R.G. ; Stall, R.A. ; Shur, M.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.149-158,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
10.

Conference Proceedings
Conference Proceedings
10. Dry Etch Development of W/WSi Short Gate MESFETs
Shul, R.J. ; Sherwin, M.E. ; Baca, A.G. ; Zolper, J.C. ; Rieger, D.J. ; Briggs, R.D.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.162-174,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2