1.

Conference Proceedings
Conference Proceedings
1. High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
Hull, B.A. ; Das, M.K. ; Richmond, J.T. ; Heath, B. ; Sumakeris, J.J. ; Geil, B.R. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1355-1358,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200oC Baseplate Temperature
Richmond, J. ; Ryu, S.H. ; Krishnaswami, S. ; Agarwal, A.K. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1445-1448,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Characteristics and Ionization Coefficient Extraction of 1kv 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing
Zhu, L. ; Losee, P.A. ; Chow, T.P. ; Jones, K.A. ; Scozzie, C.J. ; Ervin, M.H. ; Shah, P.B. ; Derenge, M.A. ; Vispute, R.D. ; Venkatesan, T. ; Agarwal, A.K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1367-1370,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
Krishnaswami, S. ; Agarwal, A.K. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1437-1440,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs
Agarwal, A.K. ; Krishnaswami, S. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J. ; Geil, B.R ; Katsis, D. ; Scozzie, C.J. ; Stahlbush, R.E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1409-1412,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers
Zhu, L. ; Chow, T.P. ; Jones, K.A. ; Scozzie, C.J. ; Agarwal, A.K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1159-1162,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. Stress Origin and Relaxation in Epitaxial AlN Thin Films on SiC
Bathe, Ravi ; Vispute, R.D. ; Habersat, Daniel ; Sharma, R.P. ; Venkatesan, T. ; Scozzie, C.J. ; Ervin, M.H. ; Jones, Ken
Pub. info.: Current issues in heteroepitaxial growth--stress relaxation and self assembly : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A.  pp.87-92,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 696
8.

Conference Proceedings
Conference Proceedings
8. Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal
Das, M.K. ; Hull, B.A. ; Krishnaswami, S. ; Husna, F. ; Haney, S. ; Lelis, A.J. ; Scozzie, C.J. ; Scofield, J.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.967-970,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
9.

Conference Proceedings
Conference Proceedings
9. A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices
Krishnaswami, S. ; Ryu, S.H. ; Heath, B. ; Agarwal, A.K. ; Palmour, J.W. ; Geil, B.R. ; Lelis, A.J. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1313-1316,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529