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Conference Proceedings

1. Temperature Dependence of Bound Exciton Emissions in GaN

Chtchekine, D. G. ; Gilliland, G. D. ; Feng, Z. C. ; Chua, S. J. ; Wolford, D. J. ; Ralph, S. E. ; Schurman, M. J. ; Ferguson, I.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G6.47.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

2. Dielectrics for GaN-Based MIS Diodes

Ren, F. ; Abernathy, C. R. ; MacKenzie, J. D. ; Gila, B. P. ; Pearton, S. J. ; Hong, M. ; Macos, M. ; Schurman, M. J. ; Baca, A. G. ; Shul, R. J.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.443-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

3. AlGaN p-i-n Photodiode Arrays for Solar-Blind Applications

Lamarre, P. ; Hairston, A. ; Tobin, S. ; Wong, K. K. ; Taylor, M.F. ; Sood, A. K. ; Reine, M. B. ; Schurman, M. J. ; Ferguson, I. T. ; Singh, R. ; Eddy, C. R., Jr.

Pub. info.:	GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	639

Conference Proceedings

4. The Role of Impurities in LP-MOCVD Grown Gallium Nitride

Hwang, C. -Y. ; Li, Y. ; Schurman, M. J. ; Mayo, W. E. ; Lu, Y. ; Stall, R. A.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.521-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

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