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13 results

Conference Proceedings

1. Enhancement of light extraction of GaN light-emitting diodes by omni-directional reflectors with ITO nanorod low-refractive-index-layer [5941-18]

Kim, J. K. ; Xi, J.-Q, ; Luo, H. ; Cho, J, ; Sone, C. ; Park, Y. ; Schubert, E. F.

Pub. info.:	Fifth international conference on solid state lighting : 1-4 August 2005, San Diego, California, USA. pp.59410K-, 2005. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5941

Conference Proceedings

2. RAMAN AND ELLIPSOMETRIC STUDIES OF DELTA-DOPED GaAs

Yao, H. ; Schubert, E. F. ; Kopf, R. F.

Pub. info.:	Photo-induced space charge effects in semiconductors: electro-optics, photoconductivity, and the photorefractive effect : symposium held April 29-May 1, 1992, San Francisco, California, U.S.A.. pp.57-62, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	261

Conference Proceedings

3. QUANTUM-CONFINED OPTICAL INTERBAND TRANSITIONS IN δ- DOPED DOPING SUPERLLATIES

Schubert, E. F. ; Harris, T. D. ; Cunningham., J. E.

Pub. info.:	III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.. pp.21-26, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	145

Conference Proceedings

4. ENHANCEMENTS IN TWO DIMENSIONAL ELECTRON GAS DENSITY AND MOBILITY IN δ-DOPED AlGaAs HETEROSTRUCTURES

Cunningham, J. E. ; Timp, G. L. ; Schubert, E. F. ; Tsang, W. T. ; DeVegnar, P. G. N. ; Chiu, T. H. ; Agyekum, E.

Pub. info.:	Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.. pp.509-514, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	102

Conference Proceedings

5. Luminescence Properties of Si-Doped GaN and Evidence of Compensating Defects as the Origin of the Yellow Luminescence

Goepfert, I. D. ; Schubert, E. F. ; Redwing, J. M.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.679-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

6. Fabrication of Smooth GaN-Based Laser Facets

Stocker, D. A. ; Schubert, E. F. ; Boutros, K. S. ; Redwing, J. M.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G7.5.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

7. DOPING IN III-V SEMICONDUCTORS

Schubert, E. F.

Pub. info.:	Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.. pp.273-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	340

Conference Proceedings

8. Fabrication and Optical Pumping of Laser Cavities Made by Cleaving and Wet Chemical Etching

Stocker, D. ; Schubert, E. F. ; Grieshaber, W. ; Redwing, J. M. ; Boutros, K. S. ; Flynn, J. S. ; Vaudo, R. P.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.1009-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

9. Discrete Steps in the Capacitance Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures

Xia, Y. ; Williams, E. ; Park, Y. ; Yilmaz, I. ; Shah, J. M. ; Schubert, E. F. ; Wetzel, C.

Pub. info.:	GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.. pp.233-238, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	831

10.

Conference Proceedings

10. CHEMICAL BEAM EPITAXIAL GROWTH AND CAPACITANCEVOLTAGE CHARACTERIZATION OF Si δ-DOPED GaAs

Chiu, T. H. ; Schubert, E. F. ; Cunningham, J. E. ; Tsang, W. T. ; Tell, B.

Pub. info.:	Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.. pp.475-482, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	102

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