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22 results

Conference Proceedings

1. Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface

Galeckas, A. ; Hallen, A. ; Schoner, A. ; Linnros, J. ; Pirouz, P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.395-398, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Current Gain Dependence on Emitter Width in 4H-SiC BJTs

Domeij, M. ; Lee, H.S. ; Zetterling, C.M. ; Ostling, M. ; Schoner, A.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1425-1428, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate

Polychroniadis, E. K. ; Mantzari, A. ; Freudenberg, A. ; Wollweber, J. ; Nitschke, R. ; Frank, T. ; Pensl, G. ; Schoner, A.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.319-322, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

4. Realization of Large Area 3C-SiC MOSFETs

Schoner, A. ; Bakowski, M. ; Ericsson, P. ; Stromberg, H. ; Nagasawa, H. ; Abe, M.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.801-804, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

5. Realization of Large Area Vertical 3C-SiC MOSFET Devices

Schoner, A. ; Bakowski, M. ; Ericsson, P. ; Stromberg, H. ; Nagasawa, H. ; Abe, M.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1273-1276, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. Hot Spots in 4H SiC P+N Diodes Studied by the Optical-Beam-Induced-Current Technique

Frischholz, M. ; Nordgren, K. ; Rottner, K. ; Seidel, J. ; Schoner, A. ; Bakowski, M.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.157-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

7. Characterization of Deep Level Defects in 4H and 6H SiC Via DLTS, SIMS and MeV E-Beam Irradiation

Doyle, J. P. ; Aboelfotoh, M. O. ; Linnarsson, M. K. ; Svensson, B. G. ; Schoner, A. ; Nordell, N. ; Harris, C. ; Lindstrom, J. L. ; Janzen, E. ; Hemmingsson, C.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.519-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

8. OBIC Measurements on 6H-SiC Schottky Diodes

Rottner, K. ; Schoner, A. ; Frischholz, M. ; Helbig, R.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.51-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

9. Metal-Contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC

Linnarsson, M. K. ; Spetz, A. Ll. ; Janson, M. S. ; Ekedahl, L. G. ; Karlsson, S. ; Schoner, A. ; Lundstrom, I. ; Svensson, B. G.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.937-940, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

10.

Conference Proceedings

10. Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation

Ciobanu, F. ; Pensl, G. ; Afanas'ev, V. ; Schoner, A.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.693-696, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

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