1.

Conference Proceedings
Conference Proceedings
1. Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-？-nitride semiconductor device heterostructures
Schubert,M. ; Kasic,A. ; Figge,S. ; Diesselberg,M. ; Einfeldt,S. ; Hommel,D. ; Kohler,U. ; As,D.J. ; Off,J. ; Kuhn,B. ; Scholz,F. ; Woollam,J.A. ; Herzinger,C.M.
Pub. info.: Optical metrology roadmap for the semiconductor, optical, and data storage industries II : 2-3 August 2001 San Diego, USA.  pp.58-68,  2001.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4449
2.

Conference Proceedings
Conference Proceedings
2. Red AlGaInP lasers:tunable and powerful
Schweizer,H. ; Lichtenstein,N. ; Gauggel,H.P. ; Kuhn,J. ; Hofmann,R. ; Winterhoff,R. ; Geng,C. ; Moritz,A. ; Hangleiter,A. ; Scholz,F.
Pub. info.: Applications of photonic technology 3 : closing the gap between theory, development, and application.  pp.1041-1059,  1998.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3491
3.

Conference Proceedings
Conference Proceedings
3. Optical gain and waveguiding in GaN-based quantum well lasers
Heppel,S. ; Wirth,R. ; Im,J.S. ; Off,J. ; Scholz,F. ; Hangleiter,A.
Pub. info.: Physics and simulation of optoelectronic devices VII : 25-29 January 1999, San Jose, USA.  pp.32-40,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3625
4.

Conference Proceedings
Conference Proceedings
4. Optical Absorption and Excitation Spectroscopy on GaInN/GaN Double Heterostructures and Quantum Wells
Hangleiter,A. ; Heppel,S. ; Off,J. ; Sohmer,A. ; Scholz,F.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1287-1290,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Time-Resolved Spectroscopy on GaN/AIGaN Double Heterostructures and Quantum Wells
Im,J.S. ; Off,J. ; Sohmer,A. ; Scholz,F. ; Hangleiter,A.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1299-1302,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
6.

Conference Proceedings
Conference Proceedings
6. Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN
Wieser,N. ; Klose,M. ; Scholz,F. ; Off,J.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1351-1354,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
7.

Conference Proceedings
Conference Proceedings
7. Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
Wieser,N. ; Klose,M. ; Scholz,F. ; Off,J. ; Dutrieux,Y.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1355-1358,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
8.

Conference Proceedings
Conference Proceedings
8. ODMR studies of As-grown and electron-irradiated GaN and AlN
Watkins,G.D. ; Linde,M. ; Mason,P.W. ; Przybylinska,H. ; C.B0zdog ; Ufiring,S.J. ; Harle,V. ; Scholz,F. ; Choyke,W.J. ; Slack,G.A.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1087-1092,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
9.

Conference Proceedings
Conference Proceedings
9. Electrical and optical characterizatiou of defects in GaN generated by ion implantation
Haase,D. ; Burkard,M. ; Schmid,M. ; Domen,A. ; Schweizer,H. ; Bolay,H. ; Scholz,F.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1093-1098,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263