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16 results

Conference Proceedings

1. PROPERTIES OF Cd1-xMnxTe-CdTe QUANTUM WELL STRUCTURES AND SUPRLTTICES GROWN BY MBE

Bicknell, R. N. ; Giles-Taylor, N. C. ; Blanks, D. K. ; Yanka, R. W. ; Buckland, E. L. ; Schetzina, J. F.

Pub. info.:	Layered structures, epitaxy, and interfaces : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A.. pp.35-40, 1985. Pittsburgh. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	37

Conference Proceedings

2. STUDY OF HgTe-CdTe MULTILAYER STRUCTURES BY TRANSMISSION ELECTRON MICROSCOPY

Otsuka, N. ; Ihm, Y. E. ; Harris, K. A. ; Cook Jr., J. W. ; Schetzina, J. F.

Pub. info.:	Materials for infrared detectors and sources : symposium held December 1-5, 1986, Boston, Massachusetts, U.S.A.. pp.217-224, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	90

Conference Proceedings

3. Growth and Properties of III-V Nitride Films, Quantum Well Structures and Integrated Heterostructure Devices

Schetzina, J. F.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.123-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

4. Status of Nitride-Based Light-Emitting and Laser Diodes on SiC

Doverspike, K. ; Bulman, G. E. ; Sheppard, S. T. ; Kong, H. S. ; Leonard, M. ; Dieringer, H. ; Weeks, T. W., Jr. ; Edmond, J. ; Brown, J. D. ; Swindle, J. T. ; Schetzina, J. F. ; Song, Y-K. ; Kuball, M. ; Nurmikko, A.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.1169-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

5. The First Nitride Laser Diode on Silicon Carbide

Brown, J. D. ; Swindell, J. T. ; Johnson, M. A. L. ; Yu, Zhonghai ; Schetzina, J. F. ; Bulman, G. E. ; Doverspike, K. ; Sheppard, S. T. ; Weeks, T. W. ; Leonard, M. ; Kong, H. S. ; Dieringer, H. ; Carter, C. ; Edmond, J. A.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.1179-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

6. Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

Yu, Z. ; Johnson, M. A. L. ; Brown, J. D. ; El-Masry, N. A. ; Muth, J. F. ; Cook, J. W., Jr. ; Schetzina, J. F. ; Haberern, K. W. ; Kong, H. S. ; Edmond, J. A.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G4.3.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

7. Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys

Muth, J. F. ; Brown, J. D. ; Johnson, M. A. L. ; Yu, Z. ; Kolbas, R. M. ; Cook, J. W., Jr. ; Schetzina, J. F.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G5.2.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

8. A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications

Johnson, M. A. L. ; Yu, Z. ; Brown, J. D. ; Koeck, F. A. ; El-Masry, N. A. ; Kong, H. S. ; Edmond, J. A. ; Cook, J. W., Jr. ; Schetzina, J. F.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G5.10.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

9. Reactive Ion Etching of AlN, AlGaN, and GaN Using BCl3

Hughes, W. C. ; Rowland, W. H., Jr. ; Johnson, M. A. L. ; Cook, J. W., Jr. ; Schetzina, J. F.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.757-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

10.

Conference Proceedings

10. OPTICAL PROPERTIES OF DOPED Cd1-XMnTe

Lansari, Y. ; Giles, N. C. ; Schetzina, J. F. ; Becla, P. ; Kaiser, D.

Pub. info.:	Diluted magnetic (semimagnetic) semiconductors. pp.281-286, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	89

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