1.

Conference Proceedings
Conference Proceedings
1. Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C
Davidson,B.R. ; Newman,R.C. ; Pritchard,R.E. ; Robbie,D.A. ; Sangster,M.J.L. ; Wagner,J. ; Fischer,A. ; Ploog,K.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.247-252,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
2.

Conference Proceedings
Conference Proceedings
2. Recent developments and theory relating to impurity induced LVM:s in GaP and GaAs.(Invited)
Newman,R.C. ; Grosche,E.G. ; Ashwin,M.J. ; Davidson,B.R. ; Robbie,D.A. ; Leigh,R.S. ; Sangster,M.J.L.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.1-10,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
3.

Conference Proceedings
Conference Proceedings
3. Localised vibrational mode absorption of silicon donors and beryllium acceptors in MBE GaAs,InAs and InSb
Addinall,R. ; Newman,R.C. ; Ferguson,I.T. ; Mohades-Kassai,A. ; Brozel,M.R. ; Sharma,V.K.M. ; McPhail,D. ; Sangster,M.J.L.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.1027-1032,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87