Ion Implanted p+/n 4H-SiC Junctions: Effect of the Heating Rate During Post Implantation Annealing

Ion Implanted p+/n 4H-SiC Junctions: Effect of the Heating Rate During Post Implantation Annealing

Author(s):

Roberta Nipoti

Publication title:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

911

Pub. Year:

2006

Page(from):

311

Page(to):

316

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

Language:

English

Call no.:

M23500/911

Type:

Conference Proceedings

Details

TDL ID:	ZA00046615
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium B
Conf. info. (Number):	2006
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2006.04.18-2006.04.20

Similar Items:

1 Conference Proceedings Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient Nipoti, R., Bergamini, F., Moscatelli, F., Poggi, A., Canino, M., Bertuccio, G. Trans Tech Publications	7 Conference Proceedings Contact Resistivity of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC Nipoti, Roberta, Moscatelli, Francesco, Scorzoni, Andrea, Poggi, Antonella, Cardinali, Gian Carlo, Lazar, Mihai, … Materials Research Society
2 Conference Proceedings Ar Annealing at 1600℃ and 1650℃ of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature Bergamini, F., Moscatelli, F., Canino, M., Poggi, A., Nipoti, R. Trans Tech Publications	8 Conference Proceedings Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs F. Moscatelli, A. Poggi, S. Solmi, R. Nipoti, A. Armigliato Trans Tech Publications
3 Conference Proceedings Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+n 4H-SiC Diodes F. Moscatelli, F. Bergamini, A. Poggi, M. Passini, F. Tamarri Trans Tech Publications	9 Conference Proceedings Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor Bergamini, F., Rao, S.P., Poggi, A., Tamarri, F., Saddow, S.E., Nipoti, R. Trans Tech Publications
4 Conference Proceedings Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process M. Canino, F. Giannazzo, F. Roccaforte, A. Poggi, S. Solmi, V. Raineri, R. Nipoti Trans Tech Publications	10 Conference Proceedings SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature Poggi, A., Nipoti, R., Moscatelli, F., Cardinali, G.C., Canino, M. Trans Tech Publications
5 Conference Proceedings Post-Implantation Annealing of SiC: Relevance of the Heating Rate R. Nipoti Trans Tech Publications	11 Conference Proceedings Effects of Very High Neutron Fluence Irradiation on p+n Junction 4H-SiC Diodes F. Moscatelli, A. Scorzoni, A. Poggi, M. Passini, G. Pizzocchero, R. Nipoti Trans Tech Publications
6 Conference Proceedings Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, S. Cristiani Trans Tech Publications	12 Conference Proceedings Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation Poggi, A., Nipoti, R., Solmi, S., Bersani, M., Vanzetti, L. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12