1.

Conference Proceedings
Conference Proceedings
1. AN ION PROBE STUDY OF PLASMA-ASSISTED LASER DEPOSITION
Witanachchi, S. ; Ahmed, K. ; Sakthivel, P. ; Mukherjee, P.
Pub. info.: Laser ablation in materials processing : fundamentals and applications : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.51-56,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 285
2.

Conference Proceedings
Conference Proceedings
2. EFFECT OF RAPID THERMAL OXIDATION ON BLUE AND RED LUMINESCENCE BANDS OF POROUS SILICON
Sen, S. ; Kontkiewicz, A. J. ; Kontkiewicz, A. M. ; Nowak. G. ; Siejka, J. ; Sakthivel, P. ; Ahmed, K. ; Mukherjee, P. ; Witanachchi, S. ; Hoff, A. M. ; Lagowski, J.
Pub. info.: Microcrystalline and nanocrystalline semiconductors : Symposium held November 29-December 2, 1994, Boston, Massachusetts, U.S.A..  pp.369-,  1995.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 358
3.

Conference Proceedings
Conference Proceedings
3. Optical Detection on Slow Excited Neutrals in Plasme-Assisted Excimer Laser Ablation
Mukherjee, P. ; Sakthivel, P. ; Witanachchi, S.
Pub. info.: Advanced laser processing of materials - fundamentals and applications : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A..  pp.93-,  1996.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 397
4.

Conference Proceedings
Conference Proceedings
4. Structural Analyses Of Fluorine-Doped Silicon Dioxide Dielectric Thin Films By Micro-Raman Spectroscopy
Liou, H. ; Duel, J. ; Finch, V. ; Han, Q. ; Sakthivel, P. ; Ruffin, R.
Pub. info.: Materials, technology and reliability for advanced interconnects and low-k dielectrics : symposium held April 23-27, 2000, San Francisco, California, U.S.A..  pp.D5.10-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 612