1.

Conference Proceedings
Conference Proceedings
1. EFFECTS OF 450｡？THERMAL ANNEALING UPON OXYGEN PRECIPITATION IN B-DOPED CZ Si WAFERS.
HAHN,S. ; SHATAS,S. ; STEIN,H.J. ; ARST,M. ; SADANA,D.K. ; REK,Z.U. ; STOJANOFF,V.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part3  pp.975-978,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12
2.

Conference Proceedings
Conference Proceedings
2. SELECTIVE HYDROGEN PASSIVATION OF OXYGEN-RELATED THERMAL-DONOR CLUSTERS IN SILICON.
JOHNSON,N.M. ; HAHN,S.K. ; STEIN,H.J.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part2  pp.585-590,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12