1.

Conference Proceedings
Conference Proceedings
1. Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation
S.S. Suvanam ; D.M. Martin ; C.M. Zetterling ; A. Hallén
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.488-491,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
2.

Conference Proceedings
Conference Proceedings
2. Alkali Metal Re-Distribution after Oxidation of 4H-SiC
M.K. Linnarsson ; S.S. Suvanam ; L. Vines ; A. Hallén
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.677-680,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements
S.S. Suvanam ; M. Usman ; K. Gulbinas ; V. Grivickas ; A. Hallén
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.465-468,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. Total Dose Effects on 4H-SiC Bipolar Junction Transistors
S.S. Suvanam ; L. Lanni ; B.G. Malm ; C.M. Zetterling ; A. Hallén
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.579-582,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
5.

Conference Proceedings
Conference Proceedings
5. Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor
J.H. Xia ; D.M. Martin ; S.S. Suvanam ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.549-552,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
6.

Conference Proceedings
Conference Proceedings
6. Interface Analysis of P-Type 4H-SiC/Al2O3 Using Synchrotron-Based XPS
S.S. Suvanam ; M.G. Yazdi ; M. Usman ; M. Götelid ; A. Hallén
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.693-696,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858