1.

Conference Proceedings
Conference Proceedings
1. A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs
S.H. Ryu ; S. Krishnaswami ; B.A. Hull ; B. Heath ; F. Husna ; J. Richmond ; A. Agarwal ; J. Palmour ; J. Scofield
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.775-778,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices
M. Das ; S.K. Haney ; C. Jonas ; Q.C. Zhang ; S.H. Ryu
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.667-670,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. 15 kV IGBTs in 4H-SiC
S.H. Ryu ; C. Capell ; C. Jonas ; M. O'Loughlin ; L. Cheng
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.954-957,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. Welding Characteristic of Super Alloys for Nd:YAG Laser
J.O. Kim ; J. Suh ; J.H. Lee ; S.H. Ryu ; J.W. Noh
Pub. info.: Advanced welding and micro joining/packaging for the 21st century : selected peer reviewed papers from the International Welding/Joining Conference, Korea 2007 (IWJC, Korea 2007), which was held from 10th-12th May 2007 at COEX, Seoul, Korea.  pp.483-488,  2008.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 580-582
5.

Conference Proceedings
Conference Proceedings
5. CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figure of Merit
Q.C.J. Zhang ; J. Duc ; B. Hull ; J. Young ; S.H. Ryu
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.765-768,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
6.

Conference Proceedings
Conference Proceedings
6. Electro-Thermal TCAD Model for 22 kV Silicon Carbide IGBTs
M. Hinojosa ; A. Ogunniyi ; S. Bayne ; E. van Brunt ; S.H. Ryu
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.949-953,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
7.

Conference Proceedings
Conference Proceedings
7. An Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC NIGBTs
S.H. Ryu ; C. Capelll ; C. Jonas ; M. O'Loughlin ; J. Clayton
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.945-948,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
8.

Conference Proceedings
Conference Proceedings
8. Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs
B.R. Tuttle ; S. Dhar ; S.H. Ryu ; X. Zhu ; J.R. Williams
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.453-456,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
9.

Conference Proceedings
Conference Proceedings
9. 1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation
B.A. Hull ; S.H. Ryu ; J. Zhang ; C. Jonas ; M.J. O'Loughlin
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.633-636,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
10.

Conference Proceedings
Conference Proceedings
10. Performance of 60 A, 1200 V 4H-SiC DMOSFETs
B.A. Hull ; C. Jonas ; S.H. Ryu ; M.K. Das ; M.J. O'Loughlin
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.749-752,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617