1.

Conference Proceedings

Conference Proceedings
A. Debbie ; M. Caymax ; S. Brijs ; D. Brunco ; T. Conard ; E. Sleeckx ; L. Ragnarsson ; S. Van Elshocht ; S. De Gendt ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.433-446,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
2.

Conference Proceedings

Conference Proceedings
V. S. Kaushik ; K. Rohr ; S. Hyun ; S. De Gendt ; S. Van Elshocht ; A. Debbie ; J. Everoert ; A. Veboso ; S. Brus ; L. Ragnarason ; O. Richard ; M. Caymax ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.305-312,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
3.

Conference Proceedings

Conference Proceedings
X. Shi ; M. Schoekers ; L. Date ; A. Rothschild ; J. Everaert ; S. Van Elshocht ; E. Rosseel ; S. Kher
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.417-424,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
4.

Conference Proceedings

Conference Proceedings
S. Van Elshocht ; A. Hardy ; S. De Gendt ; C. Adelmann ; P. K. Baumann ; D. P. Brunco ; M. R. Caymax ; F. Conard ; P. Delugas ; P. Lehnen ; O. Richard ; E. Rohr ; D. Shamiryan ; A. Vos ; F. Witters ; P. Zimmerman ; M. K. Van Bael ; J. Mullens ; M. M. Meuris ; M. M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.479-498,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
5.

Conference Proceedings

Conference Proceedings
C. Adelmann ; S. Van Elshocht ; P. Lehnen ; T. Canard ; A. Franquet ; C. Zhao ; L. Ragnarsson ; V. Chang ; H. Choi ; Y. Hong-Yu ; S. De Gendt
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.113-120,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
6.

Conference Proceedings

Conference Proceedings
X. Shi ; A. Rothschild ; J.L. Everaert ; S. Van Elshocht ; L. Date
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.13-24,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
7.

Conference Proceedings

Conference Proceedings
S. Van Elshocht ; A. Hardy ; C. Adelmann ; M. Caymax ; T. Conard
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.299-310,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
8.

Conference Proceedings

Conference Proceedings
L. Nyns ; A. Delabie ; M. Caymax ; M.M. Heyns ; S. Van Elshocht
Pub. info.: Atomic layer deposition applications 4.  pp.257-267,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(4)