1.

Conference Proceedings
Conference Proceedings
1. Pulse Current Characterization of SiC GTO Thyristors with Etched JTE
S. Scharnholz ; R. Hassdorf ; G. Pâques ; B. Vergne ; D. Planson
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.986-989,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption
H. Hamad ; C. Raynaud ; P. Bevilacqua ; S. Scharnholz ; B. Vergne
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.245-248,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Parallel and Serial Association of SiC Light Triggered Thyristors
N. Dheilly ; G. Pâques ; S. Scharnholz ; D. Planson
Pub. info.: HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.  pp.129-133,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 711
4.

Conference Proceedings
Conference Proceedings
4. Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED
N. Dheilly ; G. Pâques ; D. Planson ; P. Bevilacqua ; S. Scharnholz
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.690-693,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
5.

Conference Proceedings
Conference Proceedings
5. Pulse Current Characterization of SiC GTO Thyristors
S. Scharnholz ; B. Vergne ; J.P. Konrath ; G. Pâques ; V. Zorngiebel
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.682-685,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
6.

Conference Proceedings
Conference Proceedings
6. Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
H. Vang ; S. Scharnholz ; C. Raynaud ; M. Lazar ; G. Pâques
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1011-1014,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
7.

Conference Proceedings
Conference Proceedings
7. Comparison of SiC Thyristors with Differently Etched JTEs
G. Pâques ; S. Scharnholz ; N. Dheilly ; D. Planson ; R.W. De Doncker
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1167-1170,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
8.

Conference Proceedings
Conference Proceedings
8. OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients
D.M. Nguyen ; C. Raynaud ; M. Lazar ; G. Pâques ; S. Scharnholz
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.545-548,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
9.

Conference Proceedings
Conference Proceedings
9. Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current
H. Hamad ; C. Raynaud ; P. Bevilacqua ; S. Scharnholz ; D. Planson
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.223-228,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
10.

Conference Proceedings
Conference Proceedings
10. Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height
G. Pâques ; S. Scharnholz ; J.P. Konrath ; N. Dheilly ; D. Planson
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.473-476,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680