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Conference Proceedings

1. Prospect of Hf-Dared Gate Dielectric by PVD with FUSI Gate for LSTP Application

M. Niwa ; R. Mitsuhashi ; S. Hayashi ; K. Yamamoto ; Y. Harada ; M. Kubota ; A. Rothchild ; T. Hoffmann ; S. Kubicek ; S. DeGendt ; M. Heyns ; A. Lauwers ; S. Biesemans ; J. Kittle

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.269-286, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

Conference Proceedings

2. Effective Workfunction Modulation by As Implantation in Metal Gate Stacks

R. Singanamalla ; H. Yu ; T. Janssens ; T. Witters ; T. Schram ; S. Kubicek ; S. DeGendt ; M. Jurczak ; K. De Meyer

Pub. info.:	Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing. pp.49-62, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	2(1)

Conference Proceedings

3. Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies

J. A. Kitti ; A. Lauwers ; M. van Dal ; H. Yu ; A. Veloso ; T. Hoffinann ; M. Pawlak ; C. Demeurisse ; S. Kubicek ; M. Niwa ; C. Vrancken ; P. Absil ; S. Bieseinans

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment. pp.233-246, 2006. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(2)

Conference Proceedings

4. Study of Ni-Silicide Contacts to Si:C Source/Drain.

S. Mertens ; Y. Cho ; F. Nouri ; R. Schreutelkamp ; Y. Kim ; P. Verheyen ; J. Steenbergen ; C. Vrancken ; H. Bender ; O. Richard ; B. Van Daele ; W. Vandervorst ; P. Absil ; S. Kubicek ; C. Demeurisse ; Z. Tokei ; A. Lauwers ; L. Geenen

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment. pp.139-148, 2006. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(2)

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