1.

Conference Proceedings
Conference Proceedings
1. Correlation Between Filament Distribution and Resistive Switching Property in Binary-Transition-Metal-Oxide Based Resistive Random Access Memory.
H. Tanaka ; K. Kinoshita ; M. Yoshihara ; S. Kishida
Pub. info.: Functional metal oxide nanostructures : symposium held November 28-December 2 2011, Boston, Massachusetts, USA.  pp.113-118,  2012.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 1406
2.

Conference Proceedings
Conference Proceedings
2. Resistance Change Caused by Electrochemically Induced Carrier Injection in NiO Films.
T. Yoda ; K. Kinoshita ; T. Fukuhara ; S. Kishida ; N. Sawai ; K. Honda
Pub. info.: Functional metal oxide nanostructures : symposium held November 28-December 2 2011, Boston, Massachusetts, USA.  pp.63-68,  2012.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 1406
3.

Conference Proceedings
Conference Proceedings
3. Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope.
K. Kinoshita ; T. Yoda ; S. Kishida
Pub. info.: New functional materials and emerging device architectures for nonvolatile memories : symposium held April 25-29, 2011, San Francisco, California, U.S.A..  pp.85-90,  2011.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 1337
4.

Conference Proceedings
Conference Proceedings
4. Analysis on Resistance Change Mechanism of NiO-ReRAM Using Visualization Technique of Data Storage Area with Secondary Electron Image
K. Kinoshita ; T. Makino ; T. Yoda ; K. Dobashi ; S. Kishida
Pub. info.: Materials and physics for nonvolatile memories II : spring 2010, April 5-9, San Francisco, California, U.S.A..  pp.227-232,  2010.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 1250
5.

Conference Proceedings
Conference Proceedings
5. Deep Submicron Contact Hole Filling by Aluminum CVD at Low Temperature
K. Sugai ; H. Okabayashi ; T. Shinzawa ; S. Kishida ; T. Okabayashi ; N. Hosokawa ; T. Yako ; H. Kadokura ; M. Isemura ; M. Naruse
Pub. info.: Proceedings of the Symposia on Interconnects, Contact Metallization, and Multilevel Metallization and Reliability for Semiconductor Devices, Interconnects, amd Thin Insulator Materials.  pp.290-298,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-25