1.

Conference Proceedings
Conference Proceedings
1. Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth
Y. Yamamoto ; S. Harada ; K. Seki ; A. Horio ; T. Mitsuhashi
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.15-18,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Spatial Distribution of Carrier Concentration in 4H-SiC Crystal Grown by Solution Method
Z.J. Wang ; T. Kawaguchi ; K. Murayama ; K. Aoyagi ; S. Harada
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.57-60,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method
K. Seki ; S. Harada ; T. Ujihara
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.311-314,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method
M. Sometani ; D. Okamoto ; S. Harada ; H. Ishimori ; S. Takasu
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.685-688,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
5.

Conference Proceedings
Conference Proceedings
5. Nondestructive and Local Evaluation of SiO2/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
N. Chinone ; R. Kosugi ; Y. Tanaka ; S. Harada ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.469-472,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
6.

Conference Proceedings
Conference Proceedings
6. Low Rons in 3kV 4H-SiC UMOSFET with MeV Implanted Buried P-Base Region
S. Harada ; M. Kato ; M. Shinozaki ; Y. Kobayashi ; K. Ariyoshi
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.769-772,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
7.

Conference Proceedings
Conference Proceedings
7. Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces
K. Ariyoshi ; S. Harada ; J. Senzaki ; T. Kojima ; Y. Kobayashi
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.721-724,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
8.

Conference Proceedings
Conference Proceedings
8. 3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation
Y. Kobayashi ; S. Harada ; H. Ishimori ; S. Takasu ; T. Kojima
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.974-977,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
9.

Conference Proceedings
Conference Proceedings
9. Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
T. Ujihara ; S. Kozawa ; K. Seki ; Y. Yamamoto ; S. Harada
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.351-354,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
10.

Conference Proceedings
Conference Proceedings
10. High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface
T. Masuda ; S. Harada ; T. Tsuno ; Y. Namikawa ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.695-698,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603