1.

Conference Proceedings
Conference Proceedings
1. DyScHfOx as High-k Gate Dielectrics: Structural and Electrical Properties
C. Adelmann ; S. Van Elshocht ; P. Lehnen ; T. Canard ; A. Franquet ; C. Zhao ; L. Ragnarsson ; V. Chang ; H. Choi ; Y. Hong-Yu ; S. De Gendt
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.113-120,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
2.

Conference Proceedings
Conference Proceedings
2. Workfunction (WF) Simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 Capped High-κ Stacks
N. Van der Heyden ; G. Pourtois ; S. De Gendt ; M. Heyns ; A. Stesmans
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.135-143,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
3.

Conference Proceedings
Conference Proceedings
3. Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation
V. S. Kaushik ; K. Rohr ; S. Hyun ; S. De Gendt ; S. Van Elshocht ; A. Debbie ; J. Everoert ; A. Veboso ; S. Brus ; L. Ragnarason ; O. Richard ; M. Caymax ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.305-312,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
4.

Conference Proceedings
Conference Proceedings
4. Advanced Nano-analysis of High-k Dielectric Stacks
M. MacKenzie ; A. Craven ; D. McComb ; S. De Gendt
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.323-330,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
5.

Conference Proceedings
Conference Proceedings
5. Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide
A. Debbie ; M. Caymax ; S. Brijs ; D. Brunco ; T. Conard ; E. Sleeckx ; L. Ragnarsson ; S. Van Elshocht ; S. De Gendt ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.433-446,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
6.

Conference Proceedings
Conference Proceedings
6. Wet Etch Characteristics of Hafnium Silicate Layers
M. Claes ; V. Paraschiv ; D. Dictus ; T. Conard ; W. Boullari ; S. Vanhaelemeersch ; S. De Gendt ; A. Delabie ; S. Van Elshoclst ; C. Zhao ; J. Everaert
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.633-644,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
7.

Conference Proceedings
Conference Proceedings
7. Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes
T. Conard ; T. Schram ; A. Akheyar ; K. Arstila ; G. Zschaetzsch ; V. Paraschiv ; W. Vandervorst ; B. Brijs ; S. De Gendt ; Z. Jiang ; V. Kaushik ; J. Lenna ; L. Ragnarsson ; D. P. Brunco
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.159-170,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
8.

Conference Proceedings
Conference Proceedings
8. Alternative Gate Dielectric Materials
S. Van Elshocht ; A. Hardy ; S. De Gendt ; C. Adelmann ; P. K. Baumann ; D. P. Brunco ; M. R. Caymax ; F. Conard ; P. Delugas ; P. Lehnen ; O. Richard ; E. Rohr ; D. Shamiryan ; A. Vos ; F. Witters ; P. Zimmerman ; M. K. Van Bael ; J. Mullens ; M. M. Meuris ; M. M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.479-498,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
9.

Conference Proceedings
Conference Proceedings
9. Evaluation of Nb(Si)N as Metal Gate Material
N. Van Hoornick ; H. De Witte ; T. Hitters ; C. Zhao ; T. Canard ; H. Huatori ; J. Swerts ; T. Schram ; J. Maes ; S. De Gendt ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.495-506,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
10.

Conference Proceedings
Conference Proceedings
10. Rare-Earth Metal Scandate High-k Layers
C. Zhao ; T. Heeg ; M. Wagner ; J. Schubert ; S. Witters ; B. Brijs ; H. Bender ; O. Richard ; V. Afanas'ev ; M. Houssa ; M. Caymasx ; S. De Gendt
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.161-176,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)