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16 results

Conference Proceedings

1. 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200oC Baseplate Temperature

Richmond, J. ; Ryu, S.H. ; Krishnaswami, S. ; Agarwal, A.K. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1445-1448, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

Krishnaswami, S. ; Agarwal, A.K. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1437-1440, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. First Demonstration of 2.1 kW Output Power at 425 MH2 Using 4H-SiC RF Power BJTs

Agarwal, A.K ; Husna, F. ; Haley, J. ; Bartlow, H. ; McCalpin, B. ; Krishnaswami, S. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1413-1416, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

Agarwal, A.K. ; Krishnaswami, S. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J. ; Geil, B.R ; Katsis, D. ; Scozzie, C.J. ; Stahlbush, R.E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1409-1412, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules

Agarwal, A.K. ; Krishnaswami, S. ; Damsky, B. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1397-1400, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. Simulations of 10 kV Trench Gate IGBTs on 4H-SiC

Zhang, Q.C. ; Ryu, S.H. ; Jonas, C. ; Agarwal, A.K. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1405-1408, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

7. A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices

Krishnaswami, S. ; Ryu, S.H. ; Heath, B. ; Agarwal, A.K. ; Palmour, J.W. ; Geil, B.R. ; Lelis, A.J. ; Scozzie, C.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1313-1316, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

8. Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

Ryu, S.H. ; Krishnaswami, S. ; Hull, B.A. ; Heath, B. ; Das, M.K. ; Richmond, J.T. ; Agarwal, A.K. ; Palmour, J.W. ; Scofield, J.D.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1261-1264, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

9. Characterization of LLDPE/Monmorillonite Nanocomposite

Ryu, S.H. ; Bae, J.H. ; Chang, Y.W.

Pub. info.:	ANTEC 2004, 62nd annual technical conference, Chicago, IL, May 16-20, 2004. pp.2196-2200, 2004. Brookfield Center, Conn.. Society of Plastics Engineers
Title of ser.:	Annual Technical Conference - ANTEC : Society of Plastics Engineers Annual Technical Papers
Ser. no.:	62

10.

Conference Proceedings

10. Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor

Agarwal, A.K. ; Ivanov, P.A. ; Levinshtein, M.E. ; Palmour, J.W. ; Rumyantsev, S.L. ; Ryu, S.H. ; Shur, M.S.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.743-746, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

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