1.

Conference Proceedings
Conference Proceedings
1. A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications
Treu, M. ; Rupp, R. ; Tai, C.S. ; Blaschitz, P. ; Hilsenbeck, J. ; Brunner, H. ; Peters, D. ; Elpelt, R. ; Reimann, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1155-1158,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Crop traceability and remote sensing in tree fruit
Perry, E.M. ; Rupp, R. ; Davenport, J. ; Leal, J. ; Pierce, F.J. ; Schulthess, U.
Pub. info.: Ecosystems' dynamics, agricultural remote sensing and modeling, and site-specific agriculture : 7 August 2003, San Diego, California, USA.  pp.103-108,  2003.  Bellingham, Wash., USA.  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5153
3.

Conference Proceedings
Conference Proceedings
3. Silicon Carbide CVD Approaches Industrial Needs
Rupp, R. ; Lanig, P. ; Volkl, J. ; Stephani, D.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.253-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
4.

Conference Proceedings
Conference Proceedings
4. *Epitaxial growth of SiC in a vertical multi-wafer CVD system: Already suited as production process?
Rupp, R. ; Hecht, C. ; Wiedenhofer, A. ; Stephani, D.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.149-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
5.

Conference Proceedings
Conference Proceedings
5. Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC
Treu, M. ; Rupp, R. ; Kapels, H. ; Bartsch, W.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.679-682,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
6.

Conference Proceedings
Conference Proceedings
6. The use of magnetic fields and microgravity in melt growth of semiconductors: A comparative study. (INVITED)
Baumgartl, J. ; Gewald, M. ; Rupp, R. ; Stierlen, J. ; Muller, G.
Pub. info.: Proceedings of the VIIth European Symposium on Materials and fluid Sciences in Microgravity : held in Oxford, UK, 10-15 September 1989.  pp.47-58,  1989.  Paris, France.  ESA Publications Division
Title of ser.: ESA SP
Ser. no.: 295
7.

Conference Proceedings
Conference Proceedings
7. Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability
Rupp, R. ; Treu, M. ; Turkes, P. ; Beermann, H. ; Scherg, T. ; Preis, H. ; Cerva, H.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.925-928,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
8.

Conference Proceedings
Conference Proceedings
8. Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide
Treu, M. ; Schorner, R. ; Friedrichs, P. ; Rupp, R. ; Wiedenhofer, A. ; Stephani, D. ; Ryssel, H.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1089-1092,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
9.

Conference Proceedings
Conference Proceedings
9. The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation
Felsl, H.P. ; Wachutka, G. ; Rupp, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.839-842,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
10.

Conference Proceedings
Conference Proceedings
10. SiC Power Devices: How to be Competitive towards Si-Based Solutions?
Rupp, R. ; Zverev, I.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.805-812,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436