1.

Conference Proceedings
Conference Proceedings
1. Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime
Dreeskornfeld, L. ; Hartwich, J. ; Landgraf, E. ; Luyken, R.J. ; Roesner, W. ; Schulz, T. ; Staedele, M. ; Schmitt-Landsiedel, D. ; Risch, L.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.361-366,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
2.

Conference Proceedings
Conference Proceedings
2. Fabrication of Ultrashort Vertical MOS-Transistors
Aeugle, T. ; Risch, L. ; Roesner, W. ; Schaefer, H. ; Franosch, M. ; Eller, M. ; Ramcke, T.
Pub. info.: ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology.  pp.561-570,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-3