Doping, Activation of Impurities, and Defect Annihilation in GaN by High Pressure Annealing
- Author(s):
Suski, T. Jun, J. Leszczynski, M. Teisseyre, H. Grzegory, I. Porowski, S. Baranowski, J. M. Rocket, A. Strite, S. Stonert, A. Turos, A. Tan, H. H. Williams, J. S. Jagadish, C. - Publication title:
- Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 482
- Pub. Year:
- 1998
- Page(from):
- 949
- Pub. info.:
- Warrendale, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993877 [1558993878]
- Language:
- English
- Call no.:
- M23500/482
- Type:
- Conference Proceedings
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