1.

Conference Proceedings
Conference Proceedings
1. Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
Raineri, V. ; Roccaforte, F. ; Libertino, S. ; Ruggiero, A. ; Massimino, V. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1167-1170,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. New Achievements on CVD Based Methods for SiC Epitaxial Growth
Crippa, D. ; Valente, G. L. ; Ruggiero, A. ; Neri, L. ; Reitano, R. ; Calcagno, L. ; Foti, G. ; Mauceri, M. ; Leone, S. ; Pistone, G. ; Abbondanza, G. ; Abbagnale, G. ; Veneroni, A. ; Omarini, F. ; Zamolo, L. ; Masi, M. ; Roccaforte, F. ; Giannazzo, G. ; Franco, S. Di ; Via, F. La
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.67-72,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
La Via, F. ; Galvagno, G. ; Firrincieli, A. ; Roccaforte, F. ; Di Franco, S. ; Ruggiero, A. ; Barbera, M. ; Reitano, R. ; Musumeci, P. ; Calcagno, L. ; Foti, G. ; Mauceri, M. ; Leone, S. ; Pistone, G. ; Portuese, F.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.163-166,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
La Via, F. ; Galvagno, G. ; Firrincieli, A. ; Roccaforte, F. ; Di Franco, S. ; Ruggiero, A. ; Calcagno, L. ; Foti, G. ; Mauceri, M. ; Leone, S. ; Pistone, G. ; Abbondanza, G. ; Portuese, F. ; Abagnale, G. ; Valente, G.L.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.199-202,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy
Raineri, V. ; Giannazzo, F. ; Calcagno, L. ; Musumeci, P. ; Roccaforte, F. ; La Via, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.655-658,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide
Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.893-896,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Ion-Irradiation Effect on the Ni/SiC Interface Reaction
Roccaforte, F. ; Calcagno, L. ; Musumeci, P. ; Via, F. La
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.255-258,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
8.

Conference Proceedings
Conference Proceedings
8. Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights
Pierobon, R. ; Meneghesso, G. ; Zanoni, E. ; Roccaforte, F. ; Via, F. La ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.933-936,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC
Roccaforte, F. ; Giannazzo, F. ; Bongiorno, C. ; Libertino, S. ; Via, F. La ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.729-732,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
10.

Conference Proceedings
Conference Proceedings
10. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide
Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.893-896,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393